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FDB8896 N-Channel MOSFET

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Description

FDB8896 May 2008 FDB8896 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDB8896
Manufacturer
Fairchild Semiconductor
File Size
400.25 KB
Datasheet
FDB8896_FairchildSemiconductor.pdf
Description
N-Channel MOSFET

Features

* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability D GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) G

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