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FDD10AN06A0 - N-Channel MOSFET

Key Features

  • r DS(ON) = 9.4mΩ (Typ. ), V GS = 10V, ID = 50A.
  • Qg(tot) = 28nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82560.

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Full PDF Text Transcription (Reference)

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FDD10AN06A0 August 2002 FDD10AN06A0 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.