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FDD6688S

30V N-Channel MOSFET

FDD6688S Features

* 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V

* Low gate charge (31 nC typical)

* Fast switching

* High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unles

FDD6688S General Description

The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild’s mo.

FDD6688S Datasheet (177.88 KB)

Preview of FDD6688S PDF

Datasheet Details

Part number:

FDD6688S

Manufacturer:

Fairchild Semiconductor

File Size:

177.88 KB

Description:

30v n-channel mosfet.

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TAGS

FDD6688S 30V N-Channel MOSFET Fairchild Semiconductor

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