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FDD6780 Datasheet - Fairchild Semiconductor

FDD6780 N-Channel Power Trench MOSFET

June 2009 * Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A * Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A * 100% UIL test * RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either .

FDD6780-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDD6780

Manufacturer:

Fairchild Semiconductor

File Size:

265.72 KB

Description:

N-channel power trench mosfet.

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FDD6780 FDD6780 N-Channel Power Trench MOSFET Fairchild Semiconductor

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