FDD6780A Datasheet - Fairchild Semiconductor

FDD6780A, N-Channel MOSFET

FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET March 2015 25 V, 8.6 mΩ .
Max rDS(on) = 8. Max rDS(on) = 19. 100% UIL test.

Applications

* Vcore DC-DC for Desktop Computers and Servers
* VRM for Intermediate Bus Architecture D G S D-PAK (TO-252) D G G D S Short-Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Vol

FDD6780A_FairchildSemiconductor.pdf