FDD86250 Datasheet, Mosfet, Fairchild Semiconductor

FDD86250 Features

• Mosfet General Description
• Shielded Gate MOSFET Technology
• Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
• Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
• 10

PDF File Details

Part number:

FDD86250

Manufacturer:

Fairchild Semiconductor

File Size:

492.26kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Shielded Gate MOSFET Technology

Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A

Max rDS(on) = 31 mΩ at VGS

TAGS

FDD86250

Fairchild Semiconductor

📁 Related Datasheet

FDD86250 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor FDD86250 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100.

FDD86252 - N-Channel MOSFET (Fairchild Semiconductor)
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ March 2015 Features G.

FDD86069-F085 - N-Channel Power MOSFET (ON Semiconductor)
MOSFET - Power, Single N-Channel 100 V, 10.5 mW, 51 A FDD86069-F085 Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to.

FDD86102 - N-Channel MOSFET (Fairchild Semiconductor)
FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ March 2015 Features G.

FDD86102LZ - N-Channel MOSFET (Fairchild Semiconductor)
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Featu.

FDD86102LZ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot v.

FDD86110 - N-Channel MOSFET (Fairchild Semiconductor)
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features .

FDD86113LZ - N-Channel MOSFET (Fairchild Semiconductor)
FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Feat.

FDD86326 - N-Channel MOSFET (Fairchild Semiconductor)
FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ Features G.

FDD86367 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 68 nC.