FDD8870 - N-Channel PowerTrench MOSFET
FDD8870 Features
* r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
* r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
* High performance trench technology for extremely low r DS(ON)
* Low gate charge Applications
* DC/DC converters
* High power and current handling capability D
