FDD8870 N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDD8870 / FDU8870 September 2004 FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDD8870
Manufacturer: Fairchild Semiconductor
File Size: 464.85 KB
Datasheet: FDD8870_FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
* r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
* High performance trench technology for extremely low r DS(ON)

Applications

* DC/DC converters
* High power and current handling capability D G S I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous

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FDD8870 N-Channel PowerTrench MOSFET Fairchild Semiconductor

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