FDD8876 Datasheet - Fairchild Semiconductor

FDD8876 N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications * DC/DC converters Fea.

FDD8876 Features

* rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability

* RoHS Compliant D G S DTO-P-2A5K2 (TO-252) G

FDD8876_FairchildSemiconductor.pdf