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FDD8876 N-Channel PowerTrench MOSFET

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Description

FDD8876 / FDU8876 March 2015 FDD8876 / FDU8876 N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDD8876
Manufacturer
Fairchild Semiconductor
File Size
439.52 KB
Datasheet
FDD8876_FairchildSemiconductor.pdf
Description
N-Channel PowerTrench MOSFET

Features

* rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* RoHS Compliant D G S DTO-P-2A5K2 (TO-252) G

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