FDD8876 - N-Channel PowerTrench MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications * DC/DC converters Fea
FDD8876 Features
* rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* RoHS Compliant D G S DTO-P-2A5K2 (TO-252) G
