FDD8880

N-Channel MOSFET

ON Semiconductor

* rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A

* rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A

* High Performance Trench Technology for Extremely Low rDS(ON)

* Low Gate Charge

* High Power and Current Handling Capability

* These Devices are Pb

* Free and are

FDD8880

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N-channel mosfet.

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FDD8880 N-Channel MOSFET ON Semiconductor

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