FDD8880 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDD8880
Manufacturer: ON Semiconductor ↗
File Size: 462.41 KB
Datasheet: FDD8880-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
* rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
* High Performance Trench Technology for Extremely Low rDS(ON)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and are

Applications

* DC/DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Continuous (TA = 25°C, Current VGS = 10 V) (Note 1) 58 A Continuous (TA = 25°C, VGS = 4.5 V)

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FDD8880 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDD8880-like datasheet