Datasheet Details
- Part number
- FDD8880
- Manufacturer
- ON Semiconductor ↗
- File Size
- 462.41 KB
- Datasheet
- FDD8880-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDD8880 Description
MOSFET * N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G General .
This N.
Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or convent.
FDD8880 Features
* rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
* rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
* High Performance Trench Technology for Extremely Low rDS(ON)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and are
FDD8880 Applications
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
30
V
VGS Gate to Source Voltage
±20
V
ID
Drain Continuous (TA = 25°C,
Current VGS = 10 V) (Note 1)
58
A
Continuous (TA = 25°C, VGS = 4.5 V)
📁 Related Datasheet
📌 All Tags