FDD8896_F085 - N-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD8896_F085
Manufacturer	Fairchild Semiconductor
File Size	898.51 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDD8896_F085 Datasheet
Additional preview pages of the FDD8896_F085 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters January 2012

Features

rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability.
Qualified to AEC Q101.
RoHS Compliant D G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T.

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Published: Oct 2, 2016 |