FDJ1028N Datasheet - Fairchild Semiconductor

FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET

This dual N-Channel 2.5V speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.

FDJ1028N Features

* 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications

* Battery management Gen

FDJ1028N_FairchildSemiconductor.pdf