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FDJ1028N

N-Channel 2.5 Vgs Specified PowerTrench MOSFET

FDJ1028N Features

* 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications

* Battery management Gen

FDJ1028N General Description

This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.

FDJ1028N Datasheet (591.12 KB)

Preview of FDJ1028N PDF

Datasheet Details

Part number:

FDJ1028N

Manufacturer:

Fairchild Semiconductor

File Size:

591.12 KB

Description:

N-channel 2.5 vgs specified powertrench mosfet.

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TAGS

FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Fairchild Semiconductor

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