FDJ128N Datasheet, Mosfet, Fairchild Semiconductor

FDJ128N Features

• Mosfet
• 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)

PDF File Details

Part number:

FDJ128N

Manufacturer:

Fairchild Semiconductor

File Size:

171.17kb

Download:

📄 Datasheet

Description:

N-channel 2.5 vgs specified powertrench mosfet. This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery po

FDJ128N Application

• Applications Applications
• Battery management Features
• 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5

TAGS

FDJ128N

Fairchild Semiconductor

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