FDJ1032C Complementary PowerTrench MOSFET

Fairchild Semiconductor

Description

FDJ1032C Complementary PowerTrench® MOSFET F FDJ1032C Complementary PowerTrench® MOSFET June 2008 .
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on.

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Datasheet Specifications

Part number: FDJ1032C
Manufacturer: Fairchild Semiconductor
File Size: 1.19 MB
Datasheet: FDJ1032C-FairchildSemiconductor.pdf
Description: Complementary PowerTrench MOSFET

Features

* Q1
* 2.8 A,
* 20 V.
* Q2 3.2 A, 20 V.
* Low gate charge RDS(ON) = 160 mΩ @ VGS =
* 4.5 V RDS(ON) = 230 mΩ @ VGS =
* 2.5 V RDS(ON) = 390 mΩ @ VGS =
* 1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
* High performance trench te

Applications

* where low in-line power loss and fast switching are required. Applications
* DC/DC converter
* Load switch
* Motor Driving S2 S1 G1 G2 S2 S1 Bottom Drain Contact 43 Q2 (N) 52 61 Q1 (P) Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter

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