Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
DC/DC converter
Load switch
Motor Driving
S2 S1 G1
G2 S2 S1
Bottom Drain Contact
43 Q2 (N)
52
61 Q1 (P)
Bott
Features
- Q1.
- 2.8 A,.
- 20 V.
- Q2 3.2 A, 20 V.
- Low gate charge
RDS(ON) = 160 mΩ @ VGS =.
- 4.5 V RDS(ON) = 230 mΩ @ VGS =.
- 2.5 V RDS(ON) = 390 mΩ @ VGS =.
- 1.8 V
RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V.
- High performance trench technology for extremely low RDS(ON).
- FLMP SC75 package: Enhanced thermal performance in industry-standard package size.
- RoHS Compliant
General.
FDJ1032C-FairchildSemiconductor.pdf
