FDJ1032C - Complementary PowerTrench MOSFET
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications wher
FDJ1032C Features
* Q1
* 2.8 A,
* 20 V.
* Q2 3.2 A, 20 V.
* Low gate charge RDS(ON) = 160 mΩ @ VGS =
* 4.5 V RDS(ON) = 230 mΩ @ VGS =
* 2.5 V RDS(ON) = 390 mΩ @ VGS =
* 1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
* High performance trench te
