FDJ1032C Datasheet - Fairchild Semiconductor

Complementary PowerTrench MOSFET

FDJ1032C Features

* Q1

* 2.8 A,

* 20 V.

* Q2 3.2 A, 20 V.

* Low gate charge RDS(ON) = 160 mΩ @ VGS =

* 4.5 V RDS(ON) = 230 mΩ @ VGS =

* 2.5 V RDS(ON) = 390 mΩ @ VGS =

* 1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V

* High performance trench te

FDJ1032C General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications wher.

FDJ1032C Datasheet (1.19 MB)

FDJ1032C Datasheet Preview — Preview of FDJ1032C PDF

Datasheet Details

Part number:

FDJ1032C

Manufacturer:

Fairchild Semiconductor

File Size:

1.19 MB

Description:

Complementary powertrench mosfet.

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FDJ1032C Complementary PowerTrench MOSFET Fairchild Semiconductor

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FDJ1032C Features

FDJ1032C General Description

Datasheet Details

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Description:

FDJ1032C Distributor