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FDMA86265P P-Channel MOSFET

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Description

FDMA86265P P-Channel PowerTrench® MOSFET August 2018 FDMA86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω .
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance an.

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Features

* Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
* Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
* Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
* Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
* This product is

Applications

* as well as load switch applications
* 100% UIL tested

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