FDMA8878-F130

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A

* Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A

* High Performance Trench Technology for Extremely Low RDS(on)

* Fast Switching Speed

* Pb

* Free, Halide Free and RoHS Compliant Applications

* DC

FDMA8878-F130

245.25 KB

N-channel mosfet.

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FDMA8878-F130 N-Channel MOSFET ON Semiconductor

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