Description
+ MOSFET * N-Channel, POWERTRENCH) 30 V, 9.0 A, 16 mW FDMA8878, FDMA8878-F130 General .
This N.
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance.
Features
* Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
* Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A
* High Performance Trench Technology for Extremely Low RDS(on)
* Fast Switching Speed
* Pb
Applications
* DC
* DC Buck Converters
* Load Switch in NB
* Notebook Battery Power Management
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note 3)
ID
Drain Current
Continuou