FDMA8878 Single N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Channel Power Trench® MOSFET 30 V, 9.0 A, 16 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching perfor.

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Datasheet Specifications

Part number: FDMA8878
Manufacturer: Fairchild Semiconductor
File Size: 212.78 KB
Datasheet: FDMA8878-FairchildSemiconductor.pdf
Description: Single N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
* Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed

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FDMA8878 Single N-Channel PowerTrench MOSFET Fairchild Semiconductor

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