FDMA8884 Single N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching perform.

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Datasheet Specifications

Part number: FDMA8884
Manufacturer: Fairchild Semiconductor
File Size: 308.99 KB
Datasheet: FDMA8884-FairchildSemiconductor.pdf
Description: Single N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed

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FDMA8884 Single N-Channel PowerTrench MOSFET Fairchild Semiconductor

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