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FDMA0104 - N-Channel MOSFET

General Description

Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A Low Profile-0.8 mm maximum in the new package MicroFE

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA0104 Single N-Channel 1.5 V Specified PowerTrench® MOSFET FDMA0104 May 2011 Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.4 A, 14.5 mΩ Features General Description „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A „ Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A „ Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A „ Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A „ Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm „ RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.