Datasheet Details
| Part number | FDMA0104 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 232.87 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMA0104-FairchildSemiconductor.pdf |
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Overview: FDMA0104 Single N-Channel 1.5 V Specified PowerTrench® MOSFET FDMA0104 May 2011 Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.4 A, 14.
| Part number | FDMA0104 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 232.87 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMA0104-FairchildSemiconductor.pdf |
|
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Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Applications Li-lon Battery Pack DC-DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact D1 6D D2 5D G3 4S DD S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 9.4 54 1.9 0.7 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 65 (Note 1b) 180 °C/W Device Marking 104 Device FDMA0104 Package MicroFET 2X2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation 1 FDMA0104 Rev.C www.fairchildsemi.com FDMA0104 Single N-Channel 1.5 V Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 20 ID = 250 μA, refe
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