FDMA0104 Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A - Max r DS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A - Max r DS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A - Max r DS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A - Low Profile-0.8 mm maximum in the new package Micro FET 2x2 mm - Ro HS pliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the r DS(ON) @ VGS = 1.5 V on special Micro FET leadframe. Applications - Li-lon Battery Pack - DC-DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact D1 6D D2 5D G3 4S DD S Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 9.4 54 1.9...