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FDMS8023S - MOSFET

Description

Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL teste

Features

  • General.

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Full PDF Text Transcription

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FDMS8023S N-Channel PowerTrench® SyncFETTM FDMS8023S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ October 2014 Features General Description „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
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