FDMS8023S
Features
General Description
- Max r DS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A
- Max r DS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A
- Advanced package and silicon bination for low r DS(on) and high efficiency
- Sync FET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/GPU low side switch
- Networking Point of Load low side switch
- Tele secondary side rectification
Top Bottom
Pin 1
S D5
D6
Power 56
D7...
