FDMS8023S - MOSFET
* Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A * Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A * Advanced package and silicon combination for low rDS(on) and high efficiency * SyncFET Schottky Body Diode * MSL1 robust package design * 100% UIL teste
