FDN339AN Overview
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDN339AN Key Features
- Low gate charge (7nC typical). High performance trench technology for extremely low RDS(ON). High power and current hand
