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FDN339AN - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V.
  • Low gate charge (7nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Datasheet Details

Part number FDN339AN
Manufacturer Fairchild Semiconductor
File Size 260.00 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN339AN Datasheet
Additional preview pages of the FDN339AN datasheet.

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Full PDF Text Transcription

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FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V. • • • Low gate charge (7nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
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