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FDS8672S N-Channel MOSFET

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Description

FDS8672S N-Channel PowerTrench® SyncFET™ December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ .
tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies.

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Features

* Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A
* Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
* Includes SyncFET Schottky body diode
* High performance trench technology for extremely low rDS(on) and fast switching
* High power and current handling capability

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