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FDS9933BZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A

Low gate charge (11nC typical).

High performance trench technology for extremely low rDS(on).

HBM ESD protection level >3kV (Note 3).

RoHS Complian

Overview

FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.

Key Features

  • General.