FDS9933BZ Datasheet, Mosfet, Fairchild Semiconductor

FDS9933BZ Features

• Mosfet General Description
• Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
• Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
• Low gate charge (11nC typical).

PDF File Details

Part number:

FDS9933BZ

Manufacturer:

Fairchild Semiconductor

File Size:

265.18kb

Download:

📄 Datasheet

Description:

Dual p-channel 2.5v specified powertrench mosfet.

Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A

Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A

Low gate c

FDS9933BZ Application

• Applications load switching and power management, battery charging and protection circuits. Applications
• Battery Charging
• Load

TAGS

FDS9933BZ

Fairchild Semiconductor

📁 Related Datasheet

FDS9933 - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDS9933 January 2004 FDS9933 Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of.

FDS9933A - Dual N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDS9933A November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are pro.

FDS9934C - MOSFET (Fairchild Semiconductor)
FDS9934C March 2006 FDS9934C Complementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild .

FDS9936A - Dual N-Channel Enhancement Mode Field Effect Transistor (Fairchild Semiconductor)
May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect tran.

FDS9926A - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS9926A July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairch.

FDS9926A - Dual N-Channel MOSFET (ON Semiconductor)
MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDS9926A General Description These N−Channel 2.5 V specified MOSFETs use onsemi’s advanced POW.

FDS9945 - 60V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS9945 February 2001 FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifical.

FDS9945-NL - Dual N-Channel MOSFET (VBsemi)
FDS9945-NL .VBsemi. Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (.

FDS9953A - Dual 30V P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS9953A May 2001 FDS9953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild S.

FDS9958 - Dual P-Channel MOSFET (Fairchild Semiconductor)
FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features „ Max rDS(on) =105mΩ at V.