* General Description
* Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
* Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
* Low gate charge (11nC typical).
* High performance trench technology for extremely low rDS(on).
* HBM ESD protection level >3kV (Note 3).
FDS9933BZ Datasheet (265.18 KB)
FDS9933BZ
Fairchild Semiconductor
265.18 KB
Dual p-channel 2.5v specified powertrench mosfet.
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
tm
-20V, -4.9A,.
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