FDS9934C Description
FDS9934C March 2006 FDS9934C plementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and...
FDS9934C Key Features
- Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V
- Q2: -5 A, -20 V, RDS(ON) = 55 mΩ @ VGS = -4.5 V RDS(ON) = 90 mΩ @ VGS = -2.5 V