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FDS9934C - MOSFET

Key Features

  • Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V.
  • Q2:.
  • 5 A,.
  • 20 V, RDS(ON) = 55 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 90 mΩ @ VGS =.
  • 2.5 V DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous (Note 1a).
  • Puls.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS9934C March 2006 FDS9934C Complementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V. • Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 90 mΩ @ VGS = –2.