FDS9958 Dual P-Channel MOSFET

Fairchild Semiconductor

Description

FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ .
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tail.

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Datasheet Specifications

Part number: FDS9958
Manufacturer: Fairchild Semiconductor
File Size: 339.23 KB
Datasheet: FDS9958_FairchildSemiconductor.pdf
Description: Dual P-Channel MOSFET

Features

* Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
* Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A

Applications

* load switching and power management, battery charging and protection circuits. Applications
* Load Switch
* Power Management D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS I

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FDS9958 Dual P-Channel MOSFET Fairchild Semiconductor

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