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FDS9958 - Dual P-Channel MOSFET

General Description

These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A.
  • Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A.
  • RoHS Compliant ® tm General.

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FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features „ Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A „ Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A „ RoHS Compliant ® tm General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.