FDS9958 Datasheet | Fairchild Semiconductor

FDS9958 Dual P-Channel Power Trench® MOSFET July 2007 Dual P-Channel Power Trench MOSFET -60V, -2.9A, 105mΩ Features - Max r DS(on) =105mΩ at VGS = -10V, ID = -2.9A - Max r DS(on) =135mΩ at VGS = -4.5V, ID = -2.5A - Ro HS pliant ® tm General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications - Load Switch - Power Management D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings -60 ±20 -2.9 -12 54 2 1.6 0.9 -55 to +150 °C W Units V V A m J Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 40 78 °C/W Package Marking and Ordering Information Device Marking FDS9958 Device FDS9958 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500units ©2007 Fairchild Semiconductor Corporation FDS9958 Rev.C .fairchildsemi. Free Datasheet http://../ FDS9958 Dual P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max...