Datasheet Summary
May 2001
Dual 30V P-Channel PowerTrench® MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
- 25V).
Features
- - 2.9 A,
- 30 V RDS(ON) = 130 mΩ @ V GS =
- 10 V RDS(ON) = 200 mΩ @ V GS =
- 4.5 V
- Low gate charge (2.5nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- -
- Power management Load switch Battery protection
D2 D
D2 D
DD1 D1 D
5 6 7 G1 S1 G G2 S S2 S
Q1
4 3...