FDS9958 Datasheet | Fairchild Semiconductor

FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features - Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A - Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A - RoHS pliant ® tm General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications - Load...