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FDU2N60C - N-Channel QFET MOSFET

FDU2N60C Description

FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

FDU2N60C Features

* 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 0.95 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested

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N-Channel QFET MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDU2N60C-like datasheet

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