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FDU2N60C - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 0.95 A.
  • Low Gate Charge (Typ. 8.5 nC).
  • Low Crss (Typ. 4.3 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant N-Channel QFET® MOSFET.

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Datasheet preview – FDU2N60C

Datasheet Details

Part number FDU2N60C
Manufacturer Fairchild Semiconductor
File Size 822.37 KB
Description N-Channel QFET MOSFET
Datasheet download datasheet FDU2N60C Datasheet
Additional preview pages of the FDU2N60C datasheet.

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Full PDF Text Transcription

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FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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