FDW258P Datasheet, Mosfet, Fairchild Semiconductor

FDW258P Features

• Mosfet
• 
    –9 A,
    –12 V. RDS(ON) = 11 mΩ @ VGS =
    –4.5 V RDS(ON) = 14 mΩ @ VGS =
    –2.5 V RDS(ON) = 20 mΩ @ VGS =
   &n

PDF File Details

Part number:

FDW258P

Manufacturer:

Fairchild Semiconductor

File Size:

161.80kb

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📄 Datasheet

Description:

P-channel 1.8v specified powertrench mosfet. This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been

FDW258P Application

• Applications with a wide range of gate drive voltage (1.8V
    – 8V). Features
• 
    –9 A,
    –12 V. R

TAGS

FDW258P

Fairchild Semiconductor

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