FDY4000CZ Datasheet (Fairchild Semiconductor) - Complementary N & P-Channel PowerTrench MOSFET

FDY4000CZ, Complementary N & P-Channel PowerTrench MOSFET

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V.

Applications * Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA * Max rDS(on) = 1.6Ω at V

FDY4000CZ Features

* Q1: N-Channel

* Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA

* Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA

* Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel

* Level shifting

* Power Supply Converter Circuits

* Load/Power Switching Cell Ph