FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET .
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS.

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Datasheet Specifications

Part number: FDY4000CZ
Manufacturer: Fairchild Semiconductor
File Size: 477.04 KB
Datasheet: FDY4000CZ_FairchildSemiconductor.pdf
Description: Complementary N & P-Channel PowerTrench MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA
* Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA
* Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel
* Level shifting
* Power Supply Converter Circuits
* Load/Power Switching Cell Ph

Applications

* Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA
* Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA
* Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA
* ESD protection diode (note 3)
* RoHS Compliant 6 5 4 www. DataSheet4U. com S2 4 3 D2 G2 5 2 G1 1 2 3 D

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FDY4000CZ Complementary P-Channel PowerTrench MOSFET Fairchild Semiconductor

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