FDY4000CZ Datasheet - Fairchild Semiconductor

FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications * Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA * Max rDS(on) = 1.6Ω at V.

FDY4000CZ Features

* Q1: N-Channel

* Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA

* Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA

* Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel

* Level shifting

* Power Supply Converter Circuits

* Load/Power Switching Cell Ph

FDY4000CZ Datasheet (477.04 KB)

FDY4000CZ Datasheet Preview — Preview of FDY4000CZ PDF

Datasheet Details

Part number:

FDY4000CZ

Manufacturer:

Fairchild Semiconductor

File Size:

477.04 KB

Description:

Complementary n & p-channel powertrench mosfet.

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FDY4000CZ Complementary P-Channel PowerTrench MOSFET Fairchild Semiconductor

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