FDZ209N 60V N-Channel PowerTrench BGA MOSFET

Fairchild Semiconductor

Description

FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General .
Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON).

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Datasheet Specifications

Part number: FDZ209N
Manufacturer: Fairchild Semiconductor
File Size: 172.18 KB
Datasheet: FDZ209N_FairchildSemiconductor.pdf
Description: 60V N-Channel PowerTrench BGA MOSFET

Features

* 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V
* Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6
* Ultra-thin package: less than 0.80 mm height when mounted to PCB
* Outstanding thermal transfer characteristics: 4 times better than SSOT-6
* Ultra-lo

Applications

* Solenoid Drivers D S D S S D D S S D D Index slot Index slot G D G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (Note 1a)
* Pulsed Power

FDZ209N Distributors

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FDZ209N 60V N-Channel PowerTrench BGA MOSFET Fairchild Semiconductor

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