FGH50T65UPD Datasheet, Igbt, Fairchild Semiconductor

FGH50T65UPD Features

  • Igbt
  • Maximum Junction Temperature : TJ = 175oC
  • Positive Temperaure Co-efficient for easy Parallel Operating
  • High Current Capability
  • Low Saturation Vol

PDF File Details

Part number:

FGH50T65UPD

Manufacturer:

Fairchild Semiconductor

File Size:

368.89kb

Download:

📄 Datasheet

Description:

Field stop trench igbt. Using innovative field stop trench IGBT technology, Fairchild®’s new series of field stop trench IGBTs offer optimum performance for

Datasheet Preview: FGH50T65UPD 📥 Download PDF (368.89kb)
Page 2 of FGH50T65UPD Page 3 of FGH50T65UPD

FGH50T65UPD Application

  • Applications
  • Solar Inverter, UPS, Welder, Digital Power Generator
  • Telecom, ESS E C C G G COLLECTOR (FLANGE) E Absolute M

TAGS

FGH50T65UPD
Field
Stop
Trench
IGBT
Fairchild Semiconductor

📁 Related Datasheet

FGH50T65UPD - IGBT (ON Semiconductor)
.

FGH50T65SQD - IGBT (ON Semiconductor)
IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th .

FGH50T65SQD - Field Stop Trench IGBT (Fairchild Semiconductor)
FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT April 2016 Features • Maximum Junction Temperature : .

FGH50N3 - N-Channel IGBT (Fairchild Semiconductor)
FGH50N3 July 2002 FGH50N3 300V, PT N-Channel IGBT General Description The FGH50N3 is a MOS gated high voltage switching device bining the best fe.

FGH50N3 - SMPS IGBT (ON Semiconductor)
IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor’s planar technology, this IGBT is ideal for many high voltage switching applications oper.

FGH50N6S2 - 600V/ SMPS II Series N-Channel IGBT (Fairchild Semiconductor)
FGH50N6S2 August 2003 FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS.

FGH50N6S2D - N-Channel IGBT (ON Semiconductor)
IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V FGH50N6S2D Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Volta.

FGH50N6S2D - 600V/ SMPS II Series N-Channel IGBT (Fairchild Semiconductor)
FGH50N6S2D July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH50N6S2D is a Low G.

FGH12040WD - IGBT (ON Semiconductor)
IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd .

FGH15T120SMD - IGBT (ON Semiconductor)
IGBT - Field Stop, Trench 1200 V, 15 A FGH15T120SMD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of f.

Stock and price

onsemi
IGBT TRENCH FS 650V 100A TO-247
DigiKey
FGH50T65UPD
223 In Stock
Qty : 510 units
Unit Price : $3.22
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts