FJA4310
Fairchild Semiconductor
196.08 KB
Npn epitaxial silicon transistor.
FJA4310
* NPN Epitaxial Silicon Transistor
FJA4310
NPN Epitaxial Silicon Transistor
* Audio Power Amplifier
* High Current Ca.
📁 Related Datasheet
FJA4310 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·DC Current Gain-
: hFE= 50(Min)@ IC= 3A ·Co.
FJA4313 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
FJA4313
DESCRIPTION ·High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to.
FJA4313 - NPN Epitaxial Silicon Transistor
(Fairchild Semiconductor)
2SC5242/FJA4313
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High.
FJA4210 - PNP Epitaxial Silicon Transistor
(Fairchild Semiconductor)
FJA4210 — PNP Epitaxial Silicon Transistor
FJA4210
PNP Epitaxial Silicon Transistor
• Audio Power Amplifier • High Current Capability : IC= -10A • Hi.
FJA4210 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
FJA4210
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·DC Current Gain-
: hFE= 50(Min)@ .
FJA4213 - PNP Epitaxial Silicon Transistor
(Fairchild Semiconductor)
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High.
FJA4213 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Breakdown Voltage-
: V(BR)CEO= -230V(Min.) ·Good Linearity of hFE ·Complement to Type FJ.
FJA13009 - Silicon NPN Transistor
(NELL SEMICONDUCTOR)
SEMICONDUCTOR
FJA13009
Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W
5 . 0 ±0 . 2
RoHS RoHS
Nell.
