FQI2NA90 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB2NA90 / FQI2NA90 September 2000 QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI2NA90
Manufacturer: Fairchild Semiconductor
File Size: 707.21 KB
Datasheet: FQI2NA90_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

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FQI2NA90 900V N-Channel MOSFET Fairchild Semiconductor

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