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FQI5N80 800V N-Channel MOSFET

FQI5N80 Description

FQB5N80 / FQI5N80 September 2000 QFET FQB5N80 / FQI5N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI5N80 Features

* 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI5N80
Manufacturer
Fairchild Semiconductor
File Size
670.78 KB
Datasheet
FQI5N80_FairchildSemiconductor.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Fairchild Semiconductor
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