FQN1N60C N-Channel QFET MOSFET

Fairchild Semiconductor

Description

FQN1N60C * N-Channel QFET® MOSFET FQN1N60C N-Channel QFET® MOSFET 600 V, 0.30 A, 11.5 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQN1N60C
Manufacturer: Fairchild Semiconductor
File Size: 754.27 KB
Datasheet: FQN1N60C-FairchildSemiconductor.pdf
Description: N-Channel QFET MOSFET

Features

* 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.15 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

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