FQN1N60C Datasheet - Fairchild Semiconductor

FQN1N60C N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQN1N60C Features

* 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A

* Low Gate Charge (Typ. 4.8 nC)

* Low Crss (Typ. 3.5 pF)

* 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

FQN1N60C-FairchildSemiconductor.pdf