These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQP11N50CF Features
* 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
* Low Gate Charge (typical 43 nC)
* Low Crss (typical 20pF)
* Fast Switching
* 100% Avalanche Tested www.DataSheet4U.com
* Improved dv/dt Capability
* Fast Recovery Body Diode (typical 90ns) TM Descrip
FQPF11N50CF_FairchildSemiconductor.pdf
Datasheet Details
FQP11N50CF, FQPF11N50CF
Fairchild Semiconductor
816.64 KB
500v n-channel mosfet.
This datasheet PDF includes multiple part numbers: FQP11N50CF, FQPF11N50CF.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
