FQP11N50CF, FQPF11N50CF Datasheet - Fairchild Semiconductor

FQP11N50CF 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP11N50CF Features

* 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V

* Low Gate Charge (typical 43 nC)

* Low Crss (typical 20pF)

* Fast Switching

* 100% Avalanche Tested www.DataSheet4U.com

* Improved dv/dt Capability

* Fast Recovery Body Diode (typical 90ns) TM Descrip

FQPF11N50CF_FairchildSemiconductor.pdf

FQP11N50CF Datasheet Preview — This datasheet PDF includes multiple part numbers: FQP11N50CF, FQPF11N50CF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

FQP11N50CF, FQPF11N50CF

Manufacturer:

Fairchild Semiconductor

File Size:

816.64 KB

Description:

500v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FQP11N50CF, FQPF11N50CF.
Please refer to the document for exact specifications by model.

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FQP11N50CF FQPF11N50CF 500V N-Channel MOSFET Fairchild Semiconductor

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