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FQP11P06 - 60V P-Channel MOSFET

FQP11P06 Description

FQP11P06 * P-Channel QFET® MOSFET FQP11P06 P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ November 2013 .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

FQP11P06 Features

* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested
* 175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherw

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60V P-Channel MOSFET Fairchild Semiconductor
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