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FQP11P06 Datasheet - Fairchild Semiconductor

FQP11P06 - 60V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand a high energy pulse

FQP11P06 Features

* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested

* 175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherw

FQP11P06_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQP11P06

Manufacturer:

Fairchild Semiconductor

File Size:

0.97 MB

Description:

60v p-channel mosfet.

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