FQP11P06 Datasheet - Fairchild Semiconductor

FQP11P06 60V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand a high energy pulse .

FQP11P06 Features

* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested

* 175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherw

FQP11P06_FairchildSemiconductor.pdf