FQP5N60C Datasheet - Fairchild Semiconductor

FQP5N60C - 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP5N60C Features

* 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-220 FQP Series GD S TO-220F FQPF S

FQP5N60C_FairchildSemiconductor.pdf