FQP50N06L

N-Channel MOSFET

ON Semiconductor

FQP50N06L Features

* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A

* Low Gate Charge (Typ. 24.5 nC)

* Low Crss (Typ. 90 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwis

FQP50N06L General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQP50N06L Datasheet (1.12 MB)