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FQP50N06L - N-Channel MOSFET

FQP50N06L Description

FQP50N06L * N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQP50N06L Features

* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max. ) @ VGS = 10 V, ID = 26.2 A
* Low Gate Charge (Typ. 24.5 nC)
* Low Crss (Typ. 90 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwis

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N-Channel MOSFET ON Semiconductor
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