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FQP58N08

80V N-Channel MOSFET

FQP58N08 Features

* 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " "

FQP58N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.

FQP58N08 Datasheet (620.35 KB)

Preview of FQP58N08 PDF

Datasheet Details

Part number:

FQP58N08

Manufacturer:

Fairchild Semiconductor

File Size:

620.35 KB

Description:

80v n-channel mosfet.

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FQP58N08 80V N-Channel MOSFET Fairchild Semiconductor

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