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FQP58N08 - 80V N-Channel MOSFET

FQP58N08 Description

FQP58N08 December 2000 QFET FQP58N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP58N08 Features

* 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " "

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80V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP58N08-like datasheet

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