FQP55N06 Datasheet - Fairchild Semiconductor

FQP55N06 60V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP55N06 Features

* 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

FQP55N06_FairchildSemiconductor.pdf