FQP55N10

100V N-Channel MOSFET

Fairchild Semiconductor

FQP55N10 Features

* 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A

* Low Gate Charge (Typ. 75 nC)

* Low Crss (Typ. 130 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise note

FQP55N10 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP55N10 Datasheet (668.01 KB)

FQP55N10 Datasheet Preview — Preview of FQP55N10 PDF

Datasheet Details

Part number:

FQP55N10

Manufacturer:

Fairchild Semiconductor

File Size:

668.01 KB

Description:

100v n-channel mosfet.

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FQP55N10 100V N-Channel MOSFET Fairchild Semiconductor

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FQP55N10 Features

FQP55N10 General Description

Datasheet Details

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Description:

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