FQP55N10 Datasheet - Fairchild Semiconductor

FQP55N10 100V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP55N10 Features

* 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A

* Low Gate Charge (Typ. 75 nC)

* Low Crss (Typ. 130 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise note

FQP55N10_FairchildSemiconductor.pdf