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FQP55N10 - 100V N-Channel MOSFET

FQP55N10 Description

FQP55N10 * N-Channel QFET® MOSFET FQP55N10 N-Channel QFET® MOSFET 100 V, 55 A, 26 mΩ .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP55N10 Features

* 55 A, 100 V, RDS(on) = 26 mΩ (Max. ) @ VGS = 10 V, ID = 27.5 A
* Low Gate Charge (Typ. 75 nC)
* Low Crss (Typ. 130 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise note

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100V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP55N10-like datasheet

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