FQP17N40 - N-Channel MOSFET
This N *Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s
FQP17N40 Features
* 16 A, 400 V RDS(on) = 270 mW (Max.) @ VGS = 10 V, ID = 8.0 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter Va
