FQP8N90C - N-Channel MOSFET

ON Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.15 A.
Low Gate Charge (Typ. 35 nC).
Low Crss (Typ. 12 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

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Published: Jun 28, 2022 |