FQP8N90C

N-Channel MOSFET

ON Semiconductor

FQP8N90C Features

* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A

* Low Gate Charge (Typ. 35 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID I

FQP8N90C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQP8N90C Datasheet (1.54 MB)