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FQP8N60C

600V N-Channel MOSFET

FQP8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltag

FQP8N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQP8N60C Datasheet (1.37 MB)

Preview of FQP8N60C PDF

Datasheet Details

Part number:

FQP8N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.37 MB

Description:

600v n-channel mosfet.

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TAGS

FQP8N60C 600V N-Channel MOSFET Fairchild Semiconductor

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