FQP8N60C Datasheet - Fairchild Semiconductor

FQP8N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQP8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltag

FQP8N60C Datasheet (1.37 MB)

FQP8N60C Datasheet Preview — Preview of FQP8N60C PDF

Datasheet Details

Part number:

FQP8N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.37 MB

Description:

600v n-channel mosfet.

📁 Related Datasheet

FQP8N60 600V N-Channel MOSFET (AOKE)

FQP8N60 8A N-Channel MOSFET (OuCan)

FQP8N25 250V N-Channel MOSFET (Fairchild Semiconductor)

FQP8N50 9A N-Channel MOSFET (OuCan)

FQP8N80 7.4A N-Channel MOSFET (Oucan Semi)

FQP8N80C 800V N-Channel MOSFET (Fairchild Semiconductor)

FQP8N90C 900V N-Channel MOSFET (Fairchild Semiconductor)

FQP8N90C N-Channel MOSFET (ON Semiconductor)

FQP85N06 60V N-Channel MOSFET (Fairchild Semiconductor)

FQP8P10 100V P-Channel MOSFET (Fairchild Semiconductor)

TAGS

FQP8N60C 600V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FQP8N60C Distributor