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FQP8N60C Datasheet - Fairchild Semiconductor

FQP8N60C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQP8N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.37 MB

Description:

600v n-channel mosfet.

FQP8N60C, 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in

FQP8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltag

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