FQP8N60C 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQP8N60C * N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQP8N60C
Manufacturer: Fairchild Semiconductor
File Size: 1.37 MB
Datasheet: FQP8N60C_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltag

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FQP8N60C 600V N-Channel MOSFET Fairchild Semiconductor

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