FQP8N90C - 900V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQP8N90C
Manufacturer: Fairchild Semiconductor
File Size: 903.36 KB
Datasheet: FQP8N90C_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

FQP8N90C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

Features

6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

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900V N-Channel MOSFET Fairchild Semiconductor

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