FQP8N80C Datasheet - Fairchild Semiconductor

FQP8N80C 800V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP8N80C Features

* 8.0 A, 800 V, RDS(on) = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A

* Low Gate Charge (Typ. 35 nC)

* Low Crss (Typ. 13 pF)

* 100% Avalanche Tested D GDS TO-220 GDS D G TO-220F S G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbo

FQP8N80C_FairchildSemiconductor.pdf