FQP3N60C - N-Channel MOSFET
This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch
FQP3N60C Features
* 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5.0 pF)
* 100% Avalanche Tested
* This is a Pb
* Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Paramete
