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FQP3N60C Datasheet - ON Semiconductor

FQP3N60C - N-Channel MOSFET

This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch

FQP3N60C Features

* 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A

* Low Gate Charge (Typ. 10.5 nC)

* Low Crss (Typ. 5.0 pF)

* 100% Avalanche Tested

* This is a Pb

* Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Paramete

FQP3N60C-ONSemiconductor.pdf

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Datasheet Details

Part number:

FQP3N60C

Manufacturer:

ON Semiconductor ↗

File Size:

351.28 KB

Description:

N-channel mosfet.

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