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FQP3N60C - N-Channel MOSFET

FQP3N60C Description

MOSFET - N-Channel QFET) 600 V, 3.4 W, 3.0 A FQP3N60C General .
This N. Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQP3N60C Features

* 3.0 A, 600 V, RDS(on) = 3.4 W (Max. ) at VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5.0 pF)
* 100% Avalanche Tested
* This is a Pb
* Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Paramete

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FQP3N60C-like datasheet

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