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FQP30N06 - 60V N-Channel MOSFET

FQP30N06 Description

FQP30N06 QFET FQP30N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP30N06 Features

* 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO

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60V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP30N06-like datasheet

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