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FQP3N80C

800V N-Channel MOSFET

FQP3N80C Features

* 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary

FQP3N80C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP3N80C Datasheet (698.76 KB)

Preview of FQP3N80C PDF

Datasheet Details

Part number:

FQP3N80C

Manufacturer:

Fairchild Semiconductor

File Size:

698.76 KB

Description:

800v n-channel mosfet.

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FQP3N80C 800V N-Channel MOSFET Fairchild Semiconductor

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